Epitaxial Technology Center
The SiCilab project provides the realization of an Integrated Laboratory for the development of advanced tools and processes aimed at producing SiC substrates.
The laboratory is located inside the E.T.C. plant and occupies 250 sqm.
The project goals are:
- The study of new processes aimed at producing monocrystalline SiC and epitaxial layers;
- The design and implementation of new deposition equipment, with in-situ control systems;
- The training of twelve researchers on Silicon carbide.
More information is available at www.sicilab.it