Epitaxial Technology Center
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R&D Projects
SiC homoepitaxy process development (MIUR L. 297)

Versatile SiC process on large substrates, environment friendly
(PIA Innovazione 2° Bando Download PDF ) -->
more information

Eteroepitaxy GaN process (POR Sicilia – Misura 3.14)

Integrated Lab for the development of advanced tools and processes aimed at producing SiC substrates (2° bando PON-REC 2007/2013) --> more information

LASTPOWER:
L
arge Area silicon carbide Substrates and heTeroepitaxial GaN for POWER device applications (ENIAC JU –Subprogramme SP8)
Ministero dell'Istruzione, dell'Universita' e della Ricerca Ministero dello Sviluppo Economico