Epitaxial Technology Center
R&D Projects
SiC homoepitaxy process development (MIUR L. 297)
Versatile SiC process on large substrates, environment friendly
(PIA Innovazione 2° Bando) --> more information
Eteroepitaxy GaN process (POR Sicilia – Misura 3.14)
Integrated Lab for the development of advanced tools and processes aimed at producing SiC substrates (2° bando PON-REC 2007/2013) --> more information
LASTPOWER:
Large Area silicon carbide Substrates and heTeroepitaxial GaN for POWER device applications (ENIAC JU –Subprogramme SP8)