E.T.C. S.r.l. - Epitaxial Technology Center

SiC Epitaxy Service

ETC offers a complete range of SiC Epitaxy specifications
Within a Class 100 SiC clean room, ETC offers the following Epitaxy Service on wafers from 2” to 200mm diameter:

4H SiC blanket homoepitaxial layer, with a wide range of thicknesses and doping concentrations for both n and p type doping
A unique multistep high-growth-rate (HGR) epitaxial process for complex p-n junctions structures
A patented Virtual Substrate process for high thickness (>100µm) and low doping (<5x10¹³at/cm³) for sensors applications
3C SiC heteroepitaxy on silicon on any diameter up to 200mm and most silicon orientations

ETC has two SiC epitaxial reactors ( ACiS M8 and ACiS M10 ) in operation to meet SiC Customers’ needs for R&D or volume production

ETC Clean room view with
ACiSM10 & ACiS M8
epitaxial reactors in operation

Available processes: TCS (SiHCl₃) Low Growth rate n and p type TCS (SiHCl₃) High growth rate n and p type Silane (SIH₄) Standard Growth rate n and p type Multi Epitaxy structures n and p type including high thicknesses Doped and undoped 3C SiC on Si
Some examples of current capabilities


Characterization capability: Epitaxial metrology services with a full characterization of SiC Epitaxy layers: Layer thickness mapping: FTIR QS2200 Carrier concentration mapping and in-depth profiling: CV Mercury probe SSM 495 Nikon automatic inspection for defects mapping (bright field, dark field, DIC, confocal) *In the SiCilab:* X-Ray diffraction Polar figures Rocking curve maps Stress measurements Optical characterization µ-Raman map µ-Photoluminescence map time-resolved photoluminescence Electrical characterization I-V and C-V by device test patterns DLTS Stress characterization by test structures (3C-SiC)
	SiC Characterization line FTIR & HG CV equipments
Applications: In addition to a fast turnaround and high yield on developed products, ETC also offers: Reactor process time for custom process development Support for facilities design and SiC Tools installation Support for any application using 4H and 3C silicon carbide